CRITICAL CURRENTS IN REAL HTSC MATERIALS

被引：10

作者：

PAN, VM

机构：

[1] Institute of Metal Physics, Kiev

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1993年 / 195卷 / 1-2期

关键词：

D O I：

10.1016/0925-8388(93)90763-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that in YBa2Cu3O7 single crystals and highly c-axis oriented thin films the similar screw is ca ions induced cooperative mechanism of growth can be observed. Such growth is accompanied by volume rotations of microblocks which result in formation of low-angle subgrain boundaries. Low angle boundaries appeared to be consisting of edge dislocations arrays (walls). Dislocation density of such particular structures actually defines values of critical current density in real HTSC materials.

引用

收藏

页码：387 / 394

页数：8

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