DIAMOND CHEMICAL-VAPOR-DEPOSITION FROM A CAPACITIVELY COUPLED RADIO-FREQUENCY PLASMA

被引：13

作者：

JACKMAN, RB ^{[1
]}

BECKMAN, J ^{[1
]}

FOORD, JS ^{[1
]}

机构：

[1] UNIV OXFORD, PHYS CHEM LAB, OXFORD OX1 3QZ, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.113591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitively coupled radio frequency (cc-rf) plasmas offer advantages over microwave (MW) induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed cc-rf sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with cc-rf is reported here, where a novel magnetically enhanced source with ring electrodes has been used.© 1995 American Institute of Physics.

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页码：1018 / 1020

页数：3

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