DESIGN AND CHARACTERIZATION OF IN0.2GA0.8AS MQW VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：30

作者：

GEELS, RS ^{[1
]}

THIBEAULT, BJ ^{[1
]}

CORZINE, SW ^{[1
]}

SCOTT, JW ^{[1
]}

COLDREN, LA ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 12期

关键词：

D O I：

10.1109/3.259415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSEL's) will be presented. The basic design goal was to increase the output power of the lasers without drastically increasing the low threshold current reported in earlier devices. The material characterization was performed by measuring in-plane lasers and broad-area VCSELs made from the same material as the small VCSEL's. For 10 mu m square devices, outputs over 3 mW, device operation over 100 degrees C, 6% wall-plug efficiency, threshold voltages under 3 V, and threshold currents under 2 mA are reported.

引用

页码：2977 / 2987

页数：11

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