REACTIVE LASER-EVAPORATION FOR HYDROGENATED AMORPHOUS-SILICON

被引：24

作者：

HANABUSA, M

SUZUKI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：431 / 432

页数：2

共 11 条

[1]

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HANABUSA, M ;

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[5]

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[6] HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS BY PLASMA TREATMENT [J].

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[8] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

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TARNG, ML .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441

[9] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

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[10] NOVEL EFFECTS OF MAGNETIC-FIELD ON THE SILANE GLOW-DISCHARGE [J].

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OSAKA, Y .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :787-788

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