NEGATIVE MAGNETORESISTANCE IN THE ANDERSON LOCALIZED STATES

被引：141

作者：

FUKUYAMA, H

YOSIDA, K

机构：

[1] The Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1979年 / 46卷 / 01期

关键词：

D O I：

10.1143/JPSJ.46.102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that the mechanism of the electronic conduction due to variable-range hopping in the Anderson localized states gives rise to a large negative magnetoresistance, particularly in the vicinity of the metal-nonmetal transition. This result is mainly caused by an exponential dependence of the hopping rate on the highest occupied energy levels. The same mechanism also leads to a strong electric field-dependence of the conductivity. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：102 / 105

页数：4

共 20 条

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES
ANDERSON, PW
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505
[2] LOW-TEMPERATURE ELECTRICAL-PROPERTIES OF 1T-TAS2
DISALVO, FJ
GRAEBNER, JE
[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (11) : 825 - 828
[3] DORDA G, 1974, P INT C PHYS SEMICON, P704
[4] DORDA G, 1974, PHYS REV LETT, V32, P1360
[5] ELECTRICAL PROPERTIES OF P-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
FRITZSCHE, H
LARKHOROVITZ, K
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 400 - 405
[6] IWAHASHI K, 1975, J PHYS SOC JPN, V39, P647, DOI 10.1143/JPSJ.39.647
[7] RESISTANCE ANOMALY AND NEGATIVE MAGNETORESISTANCE IN N-TYPE INSB AT VERY LOW TEMPERATURES
KATAYAMA, Y
TANAKA, S
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 873 - +
[8] ANGULAR DEPENDENT NEGATIVE MAGNETORESISTANCE IN SI-MOS (111) INVERSION LAYERS
KAWAGUCHI, Y
KITAHARA, H
KAWAJI, S
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (11) : 701 - 703
[9] KOBAYASHI N, COMMUNICATION
[10] KOBAYASHI S, UNPUBLISHED

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