PHONON-DRAG THERMOELECTRIC-POWER IN ALXGA1-XAS/GAAS HETEROJUNCTIONS AT LOW-TEMPERATURES

被引：5

作者：

OKUYAMA, Y

TOKUDA, N

机构：

[1] Department of Engineering Science, Faculty of Engineering, Hokkaido University, Hokkaido

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.42.7078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phonon-drag thermoelectric power Sg in AlxGa1-xAs/GaAs heterojunctions at low temperatures (5 K) is theoretically investigated based on the Cantrell-Butcher theory. The experimental data are well explained in terms of the deformation-potential constant D=8 eV without screening and the piezoelectric tensor h14=1.2×107 V/cm with screening. Above choice of parameters and treatment of screening for electron acoustic-phonon scatterings are consistent with the analysis of the mobilities and energy-loss rates of electrons in AlxGa1-xAs/GaAs heterojunctions. © 1990 The American Physical Society.

引用

页码：7078 / 7083

页数：6

共 36 条

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