LINEAR ELECTROOPTIC EFFECT IN CUBIC SILICON-CARBIDE

被引：38

作者：

TANG, X ^{[1
]}

IRVINE, KG ^{[1
]}

ZHANG, DP ^{[1
]}

SPENCER, MG ^{[1
]}

机构：

[1] HOWARD UNIV, SCH ENGN, DEPT ELECT ENGN, WASHINGTON, DC 20059 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 16期

关键词：

D O I：

10.1063/1.106165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of the electro-optic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electro-optic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10(-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6-mu-m. Also a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electro-optic coefficient we believe that silicon carbide may be a promising candidate in electro-optic applications for high optical intensity in the visible region.

引用

页码：1938 / 1939

页数：2

共 9 条

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