DC CURRENT-DEPENDENT FACETING OF VICINAL SI(111)

被引:23
作者
RAMSTAD, MJ [1 ]
BIRGENEAU, RJ [1 ]
BLUM, KI [1 ]
NOH, DY [1 ]
WELLS, BO [1 ]
YOUNG, MJ [1 ]
机构
[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
来源
EUROPHYSICS LETTERS | 1993年 / 24卷 / 08期
关键词
D O I
10.1209/0295-5075/24/8/006
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have studied the step structure of a vicinal Si(111) surface heated by st d.c. current between 1100 K and 1570 K in a synchrotron X-ray scattering experiment. Above 1275 K, a reversible faceting transformation is observed by switching current direction. On faceting the surface transforms from uniform well-ordered steps to extended (111) facets together with extremely disordered step regions. The current direction for which uniform and well-ordered steps are stable reverses above 1500 K.
引用
收藏
页码:653 / 658
页数:6
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