DC CURRENT-DEPENDENT FACETING OF VICINAL SI(111)

被引：23

作者：

RAMSTAD, MJ ^{[1
]}

BIRGENEAU, RJ ^{[1
]}

BLUM, KI ^{[1
]}

NOH, DY ^{[1
]}

WELLS, BO ^{[1
]}

YOUNG, MJ ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

EUROPHYSICS LETTERS | 1993年 / 24卷 / 08期

关键词：

D O I：

10.1209/0295-5075/24/8/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the step structure of a vicinal Si(111) surface heated by st d.c. current between 1100 K and 1570 K in a synchrotron X-ray scattering experiment. Above 1275 K, a reversible faceting transformation is observed by switching current direction. On faceting the surface transforms from uniform well-ordered steps to extended (111) facets together with extremely disordered step regions. The current direction for which uniform and well-ordered steps are stable reverses above 1500 K.

引用

收藏

页码：653 / 658

页数：6

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