THE INFLUENCE OF NITROGEN ON THE P-CONDUCTIVITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

HOFFMANN, A ^{[1
]}

LUMMER, B ^{[1
]}

ECKEY, L ^{[1
]}

KUTZER, V ^{[1
]}

FRICKE, C ^{[1
]}

HEITZ, R ^{[1
]}

BROSER, I ^{[1
]}

KURTZ, E ^{[1
]}

JOBST, B ^{[1
]}

HOMMEL, D ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90959-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present time-integrated and time-resolved photoluminescence (PL) measurements yielding new information on the incorporation mechanisms of N into p-type ZnSe epilayers. We estimate a N-associated donor level at 50 meV. The acceptor concentrations, determined by means of time-resolved PL are in reasonable agreement with NA-ND values from C-V profiling measurements. A further increase of the N-concentration results in a blue shift of this broad band, a behaviour known form highly n-doped CdS and explained by screening of shallow impurity levels.

引用

页码：1073 / 1074

页数：2