FIELD-EFFECT CONDUCTANCE CHANGE IN AMORPHOUS SILICON

被引：8

作者：

MALHOTRA, AK ^{[1
]}

NEUDECK, GW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 11期

关键词：

D O I：

10.1063/1.1655052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：557 / 559

页数：3

共 11 条

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[2]

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[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4]

COHEN MH, 1970, J NONCRYST SOLIDS, V3, P317

[5] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[6] MEASUREMENTS OF FIELD EFFECT IN AMORPHOUS SWITCHING MATERIALS [J].

EGERTON, RF .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :203-&

[7]

Fritzsche H., 1971, Journal of Non-Crystalline Solids, V6, P49, DOI 10.1016/0022-3093(71)90015-9

[8] AMBIENT INDUCED CHANGES OF CONDUCTANCE OF AMORPHOUS GERMANIUM [J].

KASTNER, M ;

FRITZSCHE, H .

MATERIALS RESEARCH BULLETIN, 1970, 5 (08) :631-+

[9] ELECTRONS IN DISORDERED STRUCTURES [J].

MOTT, NF .

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[10] ELECTRONIC-STRUCTURE OF AMORPHOUS SI FROM PHOTOEMISSION AND OPTICAL STUDIES [J].

PIERCE, DT ;

SPICER, WE .

PHYSICAL REVIEW B, 1972, 5 (08) :3017-&

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