EPITAXIAL-GROWTH OF CUBIC ALN FILMS ON (100)SILICON AND (111)SILICON BY PULSED-LASER ABLATION

被引：101

作者：

LIN, WT ^{[1
]}

MENG, LC ^{[1
]}

CHEN, GJ ^{[1
]}

LIU, HS ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT MINERAL & PETR ENGN,TAINAN 70101,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期

关键词：

D O I：

10.1063/1.113904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of cubic AlN thin films on (100) and (111) silicon substrates by pulsed laser ablation is reported. The epitaxial AlN films can be grown at temperatures above 630°C in 100-300 mTorr of N2. The epitaxial orientation relationships are (100)AlN//(100)Si and [010]AlN//[010]Si, and (111)AlN//(111)Si and [011̄]AlN//[011̄]Si. The growth of microtwins on (111) planes of AlN was also observed. In the present study, for the AlN thin films grown on (100)Si at around 680°C in 100 mTorr of N2, the epitaxial growth can cover about 90% of the film region.© 1995 American Institute of Physics.

引用

页码：2066 / 2068

页数：3

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