SUB10NM SILICON FIELD EMITTERS PRODUCED BY ELECTRON-BEAM LITHOGRAPHY AND ISOTROPIC PLASMA-ETCHING

被引：21

作者：

HUQ, SE

CHEN, L

PREWETT, PD

机构：

[1] Central Microstructure Facility, Rutherford Appleton Laboratory, Chilton, Didcot

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00064-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is a growing interest in the fabrication of nanometer scale silicon tips for use as field emitters for that panel displays. Advantages include brightness, efficiency and spatial resolution. Additionally, field emission devices offer an alternative technology for high speed, radiation-resistant microcircuits operating over wide temperature ranges. This paper reports on a new fabrication route for producing arrays of silicon nanotips with precise control of tip size and geometry without any oxidation sharpening step.

引用

页码：95 / 98

页数：4

共 6 条

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[2]

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[3]

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[4]

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[5]

McCord, Viswanathan, Hohn, Wilson, Naumann, Newman, 100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, B, 10, (1992)

[6]

Huq, Prewett, Proc. SPIE, 2194, (1994)

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