QUANTUM WELLS AND DEEP IMPURITY LEVELS UNDER HYDROSTATIC-PRESSURE

被引：7

作者：

CHANDRASEKHAR, M ^{[1
]}

CHANDRASEKHAR, HR ^{[1
]}

KANGARLU, A ^{[1
]}

VENKATESWARAN, U ^{[1
]}

CHAMBERS, FA ^{[1
]}

MEESE, JM ^{[1
]}

机构：

[1] AMOCO CORP,NAPERVILLE,IL 60566

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 01期

关键词：

CRYSTALS - Physical Properties - PHOTOLUMINESCENCE - QUANTUM THEORY;

D O I：

10.1016/0749-6036(88)90275-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a cryogenic temperature study of confined transitions and deep impurity levels in a GaAs-Ga//1// minus //xAl//xAs multiple quantum well under hydrostatic pressure. Photoreflectance at 80 to 300K was used to study quantized states up to n equals 7. A sublinear pressure behavior was found, with pressure coefficients that decreased with increasing n. Indirect transitions from L and X conduction bands were observed. Photoluminescence at 18K was used to observe a deep level, and its phonon replica, that is resonant below 24 and above 80kbar. The level is observed both in bulk GaAs and the quantum well, and may be due to Si impurities.

引用

页码：107 / 114

页数：8

共 25 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].