ADSORPTION CONTROLLED MOLECULAR-BEAM EPITAXY OF RUBIDIUM BARIUM BISMUTH OXIDE

被引：26

作者：

HELLMAN, ES

HARTFORD, EH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：332 / 335

页数：4

共 18 条

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