ELEMENTARY PROCESSES IN MOLECULAR-BEAM EPITAXY STUDIED BY IN-SITU SCANNING ELECTRON-MICROSCOPY

被引：10

作者：

INOUE, N

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa, 243-01, Morinosato-wakamiya

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00554-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Islands and steps on a growing GaAs (001) surface can be observed using a molecular beam epitaxy-scanning electron microscopy hybrid system. Elementary processes in the two-dimensional nucleation and growth mode are revealed, such as the formation, growth and coalescence of islands. In contrast to the well-established simple model, the actual growth process was found to be complicated, unsteady and inhomogeneous. Surface smoothing processes during annealing were also observed.

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页码：334 / 339

页数：6

相关论文

共 14 条

[1] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :692-696

[2] SECONDARY-ELECTRON IMAGING OF MONOLAYER STEPS ON A CLEAN SI(111) SURFACE [J].

HOMMA, Y ;

TOMITA, M ;

HAYASHI, T .

SURFACE SCIENCE, 1991, 258 (1-3) :147-152

[3] IN-SITU OBSERVATION OF MONOLAYER STEPS DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE BY SCANNING ELECTRON-MICROSCOPY [J].

HOMMA, Y ;

OSAKA, J ;

INOUE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (4B) :L563-L566

[4] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ICHIKAWA, M ;

DOI, T .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143

[5] DIRECT OBSERVATION OF THE GROWTH-INTERRUPTION EFFECT FOR MOLECULAR-BEAM-EPITAXY GROWTH ON GAAS(001) BY SCANNING TUNNELING MICROSCOPY [J].

IDE, T ;

YAMASHITA, A ;

MIZUTANI, T .

PHYSICAL REVIEW B, 1992, 46 (03) :1905-1908

[6] MBE MONOLAYER GROWTH-CONTROL BY INSITU ELECTRON-MICROSCOPY [J].

INOUE, N .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :75-82

[7] INSITU MICROSCOPY OF MBE GROWTH OF GAAS AND RELATED MATERIALS [J].

INOUE, N ;

TANIMOTO, M ;

KANISAWA, K ;

HIRONO, S ;

OSAKA, J ;

HOMMA, Y .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :956-961

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[9] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[10]

OSAKA J, 1990, MATER RES SOC SYMP P, V159, P33