SILICONATED PYROLYTIC GRAPHITE .2. STATE OF SILICON PRESENT IN SILICONATED PYROLYTIC GRAPHITE

被引:16
作者
YAJIMA, S
HIRAI, T
机构
[1] The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai
关键词
D O I
10.1007/BF00549708
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By X-ray diffraction, surface oxidation, X-ray microanalysis, electron diffraction, and electron microscopy, the state of silicon present in Siliconated pyrolytic graphite has been examined on several samples prepared under a variety of conditions. In the siliconated pyrolytic graphite prepared at the deposition temperatures below 1730° C, the greater part of the silicon occurs as β-SiC, It does not segregate in the cone boundaries but disperses uniformly. It exists as flake-like single crystals, whose size increases with decreasing temperature. The (111) plane of β-SiC is parallel to the (00l) planes of graphite. © 1969 Chapman and Hall.
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页码:424 / &
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