PROPERTIES OF BURIED INSULATING LAYERS IN SILICON FORMED BY HIGH-DOSE IMPLANTATION AT 60 KEV

被引：14

作者：

SKORUPA, W

WOLLSCHLAGER, K

GROTZSCHEL, R

SCHONEICH, J

HENTSCHEL, E

KOTTE, R

STARY, F

BARTSCH, H

GOTZ, G

机构：

[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4050 HALLE,GER DEM REP

[2] FRIEDRICH SCHILLER UNIV,SEKT PHYS,DDR-6900 JENA,GER DEM REP

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 32卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90253-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：440 / 445

页数：6

共 13 条

[1]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[3]

GIBSON JF, 1975, PROJECTED RANGE STAT

[4]

HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[5]

KOTTE R, 1986, ZFK591 REP

[6] THE FORMATION OF SIO2-FILMS ON SILICON BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

KREISSIG, U ;

HENSEL, E ;

SKORUPA, W ;

JOHANSEN, H .

THIN SOLID FILMS, 1982, 98 (03) :229-232

[7]

MARGAIL J, 1985, EUROPEAN MRS M STRAS

[8] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSES OF NITROGEN AND OXYGEN [J].

NESBIT, L ;

SLUSSER, G ;

FRENETTE, R ;

HALBACH, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1186-1190

[9] SILICON OXYNITRIDE FILMS FROM NO-NH3-SIH4 REACTION [J].

RAND, MJ ;

ROBERTS, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :446-453

[10]

REESON KJ, 1986, LEIB4

← 1 2 →