SILICON-CARBIDE BLUE AND VIOLET LIGHT-EMITTING-DIODES

被引：4

作者：

DMITRIEV, VA

MOROZENKO, YV

TZARENKOV, BV

CHELNOKOV, VE

机构：

[1] A F Ioffe Physical Technical Institute, St Petersburg

来源：

DISPLAYS | 1992年 / 13卷 / 02期

关键词：

LIGHT-EMITTING DIODES; SILICON CARBIDE; LIQUID-PHASE EPITAXY;

D O I：

10.1016/0141-9382(92)90104-Y

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The characteristics and performance data for blue and violet light-emitting diodes (LEDs) made from silicon carbide (SiC) are presented. Existing technologies for the production of SiC pn structures (ion implantation, CVD epitaxy, and various modifications of liquid-phase epitaxy) are considered, and the corresponding LEDs are compared on the basis of their rated performance. Particular emphasis is placed on liquid-phase epitaxy of SiC from the silicon melt, in view of its leading position in the efficiency levels achieved to date by SiC LEDs. Details are given of two modifications of liquid-phase epitaxy: one employing a container, and another using electromagnetic field suspension. Finally, low-temperature liquid-phase epitaxy from the Sn and Ga melts is briefly described.

引用

页码：97 / 106

页数：10

共 30 条

[1]

AVRAMENKO SF, 1985, SOV PHYS SEMICOND, V19, P1863

[2]

BRANDER RW, 1974, SILICON CARBIDE 1973, P8

[3]

Britun V. F., 1986, Soviet Physics - Technical Physics, V31, P129

[4]

Dmitriev V. A., 1985, Soviet Technical Physics Letters, V11, P98

[5]

Dmitriev V. A., 1986, Soviet Technical Physics Letters, V12

[6]

Dmitriev V. A., 1986, Soviet Technical Physics Letters, V12, P318

[7]

Dmitriev V. A., 1985, Soviet Technical Physics Letters, V11, P101

[8] 1ST SIC DYNISTOR [J].

DMITRIEV, VA ;

LEVINSHTEIN, ME ;

VAINSHTEIN, SN ;

CHELNOKOV, VE .

ELECTRONICS LETTERS, 1988, 24 (16) :1031-1033

[9]

DMITRIEV VA, 1986, 7TH P C PROC GROWTH, V1, P51

[10]

DMITRIEV VA, 1985, 6TH P ALL UN C CYRST, V3, P14

← 1 2 3 →