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PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS
被引：76
作者：
KROTKUS, A
MARCINKEVICIUS, S
JASINSKI, J
KAMINSKA, M
TAN, HH
JAGADISH, C
机构：
[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECTR MAT ENGN,CANBERRA,ACT 0200,AUSTRALIA
[2] INST SEMICOND PHYS,VILNIUS 2600,LITHUANIA
[3] ROYAL INST TECHNOL,DEPT PHYS 2,S-10044 STOCKHOLM,SWEDEN
[4] UNIV WARSAW,INST EXPTL PHYS,PL-00681 WARSAW,POLAND
关键词：
D O I：
10.1063/1.113738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semi-insulating (100) GaAs wafers were implanted with 2 MeV As of 1015 cm-2 dose. Defects were observed in GaAs during implantation that caused shortening of photocarrier lifetime by more than three orders of magnitude as compared with bulk GaAs. The implantation damage led to a reduction of resistivity and to the emergence of hopping conduction with low mobility. Annealing at 600 °C rendered considerable recovery of implantation-induced damage of GaAs structure, disappearance of hopping conduction along with an increase of mobility and resistivity. Conversely, photocarrier lifetime, an extremely significant parameter for fast optoelectronic devices, was still about 1 ps value. The analyses showed that GaAs implanted with high doses of 2 MeV As and annealed at 600 °C was a competitive material to low temperature GaAs annealed at 600 °C for optoelectronic applications.
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页码：3304 / 3306
页数：3
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