INVERSION LAYERS IN ABRUPT P-N JUNCTIONS

[1] ADIROVICH EI, 1958, SOV PHYS-TECH PHYS, V3, P49

[2] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2148 - &

[5] DIE SPERRSCHICHTKAPAZITAT DES LEGIERTEN GERMANIUM-INDIUM-GLEICHRICHTERS [J]. ZEITSCHRIFT FUR PHYSIK, 1954, 138 (3-4): : 336 - 344

[6] APPROXIMATIONS FOR ACCUMULATION AND INVERSION SPACE-CHARGE LAYERS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 667 - +

[7] SPACE-CHARGE CAPACITANCE OF ASYMMETRIC ABRUPT P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 3034 - +

[8] NUYTS W, PRIVATE COMMUNICATIO

[9] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1715 - 1720

[10] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 583 - +

[1] ADIROVICH EI, 1958, SOV PHYS-TECH PHYS, V3, P49

[2] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2148 - &

[5] DIE SPERRSCHICHTKAPAZITAT DES LEGIERTEN GERMANIUM-INDIUM-GLEICHRICHTERS [J]. ZEITSCHRIFT FUR PHYSIK, 1954, 138 (3-4): : 336 - 344

[6] APPROXIMATIONS FOR ACCUMULATION AND INVERSION SPACE-CHARGE LAYERS IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 667 - +

[7] SPACE-CHARGE CAPACITANCE OF ASYMMETRIC ABRUPT P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 3034 - +

[8] NUYTS W, PRIVATE COMMUNICATIO

[9] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12): : 1715 - 1720

[10] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 583 - +