INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI/SIO2 MOSFETS

被引：7

作者：

BALASINSKI, A

TSAI, MH

VISHNUBHOTLA, L

MA, TP

TSENG, HH

TOBIN, PJ

机构：

[1] Center for Microelectronic Materials and Structures, Department of Electrical Engineering, Yale University, New Haven

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

11;

D O I：

10.1016/0167-9317(93)90139-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incorporation of fluorine in the gate oxide is shown to reduce interface defect density in (100) and (111) Si MOSFETs, leading to increased carrier mobility and reduced 1/f noise. The resulting low densities of interface traps and oxide charge have made it possible to study more clearly the effect of the orientation-dependent electron and hole effective masses on carrier mobility.

引用

页码：97 / 100

页数：4

共 11 条

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[10] Sato, Et al., Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise inp-Type Inversion Layers on Oxidized Silicon Surfaces, Japanese Journal of Applied Physics, 8, (1969)

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