MU+ LOCALIZATION AND TUNNELING IN SC

被引：6

作者：

GYGAX, FN

AMATO, A

SCHENCK, A

ANDERSON, IS

RUSH, JJ

SOLT, G

机构：

[1] INST LAUE LANGEVIN,F-38042 GRENOBLE 9,FRANCE

[2] NATL INST STAND & TECHNOL,MAT SCI & ENGN LAB,GAITHERSBURG,MD 20899

[3] PAUL SCHERRER INST,CH-5232 VILLIGEN PSI,SWITZERLAND

来源：

HYPERFINE INTERACTIONS | 1994年 / 85卷 / 1-4期

关键词：

D O I：

10.1007/BF02069404

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

The angular and magnetic field dependence of the transverse muSR relaxation rate in single crystal Sc shows unambiguously that, at low temperatures, the muon is localized along the c-axis joining interstitial tetrahedral sites. The best agreement with the measured results, covering a complete range of high and low field data, is obtained on assuming a muon state with fast tunnelling between two adjacent sites at positions z/c = +/-0.09 above and below the a - b plane. Both contributions from the muon-induced electric field gradient and that inherent to the crystal were considered.

引用

页码：73 / 78

页数：6