INFLUENCE OF H2O ATMOSPHERE ON THE PHOTOLUMINESCENCE OF HF-PASSIVATED POROUS SILICON

被引：13

作者：

DITTRICH, T ^{[1
]}

TIMOSHENKO, VY ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,117889 MOSCOW,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.355700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of H2O atmosphere on the photoluminescence (PL) of HF-passivated porous silicon (PS) is investigated in situ for samples oxidized in air during different times. The PL intensity is found to be strongly enhanced by H2O atmosphere up to exposure times of about 50 h and to decrease for longer exposure. The PL enhancement is strongest in the red region of the PL spectra. It is suggested that H2O atmosphere generates surface traps on the PS involved in the visible light emission.

引用

页码：5436 / 5437

页数：2

共 15 条

[1]

BA XM, IN PRESS STATUS SO A

[2] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].

CANHAM, LT ;

HOULTON, MR ;

LEONG, WY ;

PICKERING, C ;

KEEN, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431

[3]

CANHAM LT, 1990, APPL PHYS LETT, V57, P1040

[4]

COLE MW, 1992, APPL PHYS LETT, V60, P280

[5]

DITTRICH T, IN PRESS

[6]

GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845

[7] VISIBLE PHOTOLUMINESCENCE OF SILICON-BASED NANOSTRUCTURES - POROUS SILICON AND SMALL SILICON-BASED CLUSTERS [J].

KANEMITSU, Y ;

SUZUKI, K ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

KYUSHIN, S ;

HIGUCHI, K ;

MATSUMOTO, H .

APPLIED PHYSICS LETTERS, 1992, 61 (20) :2446-2448

[8] FAST AND SLOW VISIBLE LUMINESCENCE BANDS OF OXIDIZED POROUS SI [J].

KOVALEV, DI ;

YAROSHETZKII, ID ;

MUSCHIK, T ;

PETROVAKOCH, V ;

KOCH, F .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :214-216

[9] SPATIALLY RESOLVED RAMAN MEASUREMENTS AT ELECTROLUMINESCENT POROUS N-SILICON [J].

KOZLOWSKI, F ;

LANG, W .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) :5401-5408

[10] ROLE OF SI-H AND SI-H2 IN THE PHOTOLUMINESCENCE OF POROUS SI [J].

LAVINE, JM ;

SAWAN, SP ;

SHIEH, YT ;

BELLEZZA, AJ .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1099-1101

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