TRANSVERSE MAGNETOTRANSPORT ANISOTROPY IN A SEMICONDUCTOR SUPERLATTICE

The vertical magnetotransport properties of GaAs-AlAs superlattices have been investigated as a function of the in-plane magnetic field orientation. Two main effects were observed: (i) the influence of the roughness anisotropy with respect to the crystallographic orientation, and (ii) the nonparabolicity of the energy in the plane of the layers. The interface fluctuations induced a modulation of the miniband transport with a period of 180 degrees. The nonparabolic energy of the deflected electronic orbits also induced a modulation of the vertical transport but with a period of 90 degrees. Both observed effects are in qualitative agreement with a semiclassical description of the Boltzmann transport equation. (C) 1995 American Institute of Physics.