FROM SUBSTRATE TO VLSI - INVESTIGATION OF HARDENED SIMOX WITHOUT EPITAXY, FOR DOSE, DOSE-RATE AND SEU PHENOMENA

被引：41

作者：

LERAY, JL ^{[1
]}

DUPONTNIVET, E ^{[1
]}

MUSSEAU, O ^{[1
]}

COIC, YM ^{[1
]}

UMBERT, A ^{[1
]}

LALANDE, P ^{[1
]}

PERE, JF ^{[1
]}

AUBERTONHERVE, AJ ^{[1
]}

BRUEL, M ^{[1
]}

JAUSSAUD, C ^{[1
]}

MARGAIL, J ^{[1
]}

GIFFARD, B ^{[1
]}

TRUCHE, R ^{[1
]}

MARTIN, F ^{[1
]}

机构：

[1] CEA, IRDI D LETI, F-38041 GRENOBLE, FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1355 / 1360

页数：6

共 8 条

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