A MONOLITHIC JUNCTION FET-N-P-N OPERATIONAL AMPLIFIER

被引：48

作者：

WILSON, GR

机构：

[1] Tektronix, Inc., Beaverton, Ore.

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 04期

关键词：

D O I：

10.1109/JSSC.1968.1049922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic operational amplifier with junction FET inputs in combination with n-p-n bipolar transistors is described. Both dc and small-signal analysis of the amplifier are carried out. Electrically the devices are comparable with discrete state-of-the-art p-channel FET's. The circuits are fabricated with a process requiring a single diffusion more than standard techniques. The process is reproducible enough to allow economical fabrication. The amplifier realizes input currents of less than 1 nA, a minimum slewing rate at unity gain of 75 V/μS and bandwidths in excess of that of any monolithic operational amplifier reported to date. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：341 / &