GRAIN-SIZE DEPENDENCE OF THE THERMAL-CONDUCTIVITY OF POLYCRYSTALLINE CHEMICAL VAPOR-DEPOSITED BETA-SIC AT LOW-TEMPERATURES

被引：61

作者：

COLLINS, AK

PICKERING, MA

TAYLOR, RL

机构：

[1] Morton International, Inc., Woburn

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.346852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal conductivity data of polycrystalline chemical vapor deposited cubic silicon carbide are calculated from thermal diffusivity and heat capacity data in the temperature region of 80-300 K. Below 200 K, a linear dependence of the thermal conductivity with the product of grain size of the silicon carbide and cubic temperature is observed. This is explained in terms of phonon scattering by the grain boundaries.

引用

页码：6510 / 6512

页数：3

共 6 条

[1] THE THERMAL CONDUCTIVITY OF SOME POLYCRYSTALLINE SOLIDS AT LOW TEMPERATURES [J].

BERMAN, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (396) :1029-1040

[2] The dependence of thickness of the thermal resistance of crystals at low temperatures [J].

de Haas, WJ ;

Biermasz, T .

PHYSICA, 1938, 5 :619-624

[3]

SCHLICHTING H, 1955, BOUNDARY LAYER THEOR, P250

[4]

ZIMAN JM, 1960, ELECTRONS PHONONS, pCH8

[5]

MORTON INT TECHNICAL, V107

[6]

LANDOLTBORNSTEIN, V3, P43

← 1 →