CAPACITANCE DISCHARGE IN VO2 THRESHOLD SWITCHING DEVICES

被引：4

作者：

ADAM, G

DUCHENE, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1098(72)90959-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1277 / &

共 13 条

[1]

ADAM G, TO BE PUBLISHED

[2] BREAKDOWN AND SUSTAINING MECHANISM IN AMORPHOUS SEMICONDUCTING THRESHOLD SWITCHES [J].

ARMITAGE, D ;

BRODIE, DE ;

EASTMAN, PC .

CANADIAN JOURNAL OF PHYSICS, 1971, 49 (12) :1662-&

[3]

BERGLUND CN, 1971, P IEEE, V59, P1079

[4]

BERGLUND CN, 1970, IEEE T ELECTRON DEVI, VED17, P137

[5]

Croitoru N., 1970, Journal of Non-Crystalline Solids, V4, P493, DOI 10.1016/0022-3093(70)90084-0

[6] FILAMENTARY CONDUCTION IN VO2 COPLANAR THIN-FILM DEVICES [J].

DUCHENE, J ;

TERRAILL.M ;

PAILLY, P ;

ADAM, G .

APPLIED PHYSICS LETTERS, 1971, 19 (04) :115-&

[7] MECHANISM OF NEGATIVE RESISTANCE AND FILAMENTARY CONDUCTION IN THERMAL SWITCHING DEVICES [J].

DUCHENE, J ;

ADAM, G ;

AUGIER, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 8 (02) :459-&

[8]

DUCHESNE J, 1971, IEEE T, VED18, P1151

[9] THERMAL EFFECTS CONNECTED WITH SWITCHING IN AMORPHOUS SEMICONDUCTING CHALCOGENIDE FILMS [J].

GUNTERSD.M .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2566-&

[10] VAPORIZATION ASSOCIATED WITH SURFACE ELECTRICAL SWITCHING IN SEMICONDUCTING AS-TE-I AND AS-TE-GE GLASSES [J].

JOHNSON, RT ;

NORTHROP, DA ;

QUINN, RK .

SOLID STATE COMMUNICATIONS, 1971, 9 (16) :1397-&

← 1 2 →