ESTIMATION OF THE OPTIMAL CONDITIONS FOR DIRECTIONAL CRYSTAL-GROWTH FROM THE VAPOR-PHASE WITH NO CONTACT BETWEEN CRYSTAL AND AMPOULE WALL

In this paper an estimation of the optimal thermal conditions for directional crystallization of some semiconducting materials from the vapour phase with no contact between crystal and ampoule wall is presented. A graph of temperature versus ratio of emissivity and heat conductivity is shown which characterizes the temperature range suitable for the directional growth of crystals of a given material when our crystal growth system is used. An extension of this growth method for low thermal conductivity materials is proposed.