MAGNETOTRANSPORT PROPERTIES OF SI-DELTA-DOPED INSB LAYERS GROWN ON GAAS

被引：2

作者：

DEKEYSER, A

BOGAERTS, R

VANBOCKSTAL, L

HOEKS, W

HERLACH, F

KARAVOLAS, VC

PEETERS, FM

VANDEGRAAF, W

BORGHS, G

机构：

[1] UNIV INSTELLING ANTWERP, DEPT PHYS, B-2610 ANTWERP, BELGIUM

[2] INTERUNIV MICROELECTR CTR, B-3001 LOUVAIN, BELGIUM

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 211卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(94)01092-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetotransport measurements up to 50 T have been performed on single Si-delta-doped layers in InSb as well as on a structure consisting of 10 delta-doped layers which are situated 50 nm apart. The low resistivity 3D channel that conceals the 2D conduction at low magnetic fields for the single delta-layers is not observed in the 10 delta-layer configuration. The occurrence of a quantum Hall plateau at a filling factor v = 1 in this system implies that the 2D conduction is due to a single 2D electron gas rather than to 10 independent 2D channels.

引用

页码：455 / 457

页数：3