SMALL-POLARON EFFECTS ON DC CONDUCTIVITY AND THERMOELECTRIC-POWER OF ONE-DIMENSIONAL MOTT SEMICONDUCTOR

被引：41

作者：

BARI, RA ^{[1
]}

机构：

[1] SUNY, DEPT PHYS, STONY BROOK, NY 11790 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4329 / 4339

页数：11

共 27 条

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