CHEMICAL-BINDING ENERGY OF POINT-DEFECTS IN BCC TRANSITION-METALS

被引:3
作者
DEMANGEAT, C
机构
[1] Laboratoire de Structure Electronique des Solides (ERA 100), Université Louis-Pasteur, Strasbourg, 67000, 4, rue Blaise-Pascal
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 05期
关键词
D O I
10.1080/13642817908245814
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The chemical binding energy of two point defects in paramagnetic b.c.c. metals is estimated in the generalized double-scattering scheme of Gautier, Moraitis and Parlebas (1976). For pairs consisting of an interstitial and a (i-metal impurity, and also an sp impurity and a d impurity, calculation yields a strong variation of the binding energy with the filling of the b.c.c. host bands. If ΔZ is the difference in charge between the substitutional d impurity and the matrix ion-cores, it is shown that, for small values of ΔZ, the binding energy is proportional to ΔZ. For ΔZ greater than 1, this perturbing limit breaks down and a complete calculation has been made. © 1979 Taylor & Francis Ltd.
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页码:447 / 455
页数:9
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