IMPROVED OXIDE PROPERTIES BY ANODIZATION OF ALUMINUM FILMS WITH THIN SPUTTERED ALUMINUM-OXIDE OVERLAYS

被引:7
作者
BYEON, SG
TZENG, Y
机构
关键词
D O I
10.1149/1.2095357
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2452 / 2458
页数:7
相关论文
共 18 条
[1]   ANODIC OXIDATION OF ALUMINUM IN PRESENCE OF A HYDRATED OXIDE [J].
ALWITT, RS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) :843-&
[2]   ANODIC OXIDE-GROWTH ON ALUMINUM IN THE PRESENCE OF A THIN THERMAL OXIDE LAYER [J].
BERNARD, WJ ;
FLORIO, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) :2319-2322
[3]   THICKNESS DEPENDENCE OF DIELECTRIC-CONSTANT AND RESISTANCE OF AL2O3 FILMS [J].
BIREY, H .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5209-5212
[4]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+
[5]   THE ANODIZATION OF HEATED ALUMINUM [J].
CREVECOEUR, C ;
DEWIT, HJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :808-816
[6]   DIELECTRIC-BREAKDOWN OF ANODIC ALUMINUM-OXIDE [J].
DEWIT, HJ ;
WIJENBERG, C ;
CREVECOEUR, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1479-1486
[7]   ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS [J].
FORLANI, F ;
MINNAJA, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :518-+
[8]   ELECTRICAL-PROPERTIES OF AL2O3-TA2O5 COMPOSITE DIELECTRIC THIN-FILMS PREPARED BY RF REACTIVE SPUTTERING [J].
NOMURA, K ;
OGAWA, H ;
ABE, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :922-925
[9]   PROPERTIES OF RF-SPUTTERED AL2O3 FILMS DEPOSITED BY PLANAR MAGNETRON [J].
NOWICKI, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :127-133