RELIABILITY OF SSPAS AND TWTAS

被引：13

作者：

STRAUSS, R

机构：

[1] R&D Strauss Assoc., McLean

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.278524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two extensive communication satellite reliability studies were conducted in 1991 and 1993. These studies permitted a direct 'in-orbit' comparison at C-Band between a thermionic electron device [TWT/TWTA] and a solid state device [GaAs MESFET/SSPA]. Excellent performance, lifetimes and reliabilities for both types of microwave power amplifiers were obtained. However, surprisingly, both studies registered higher failure rates for SSPA's than TWTA's.

引用

页码：625 / 626

页数：2