THE IMPACT OF SI/SIO2 INTERFACE ASPERITIES ON BREAKDOWN CHARACTERISTICS OF THIN GATE OXIDES

被引：6

作者：

LOPES, MCV

HASENACK, CM

机构：

[1] Laboratório de Sistemas Inteárarels, Departamento de Enaenharia de Eletricidade da Escola Politécnica da USP

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 10期

关键词：

D O I：

10.1149/1.2069005

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of Si/SiO2 interface roughness on SiO2 breakdown characteristics is investigated by means of numerical calculations. It is shown that similar roughness values of the Si/SiO2 interface may yield different breakdown distributions. It is also shown that severe field enhancement effects may occur at the Si/SiO2 interface for some specific Si/SiO2 interface asperities. A possible correlation between Si/SiO2 interface roughness, oxygen precipitates, and breakdown characteristics is addressed.

引用

页码：2909 / 2912

页数：4

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