ADVANCED ARSENIC PURIFICATION AND GAAS SYNTHESIS FOR IMPROVED REPRODUCIBLE GROWTH OF UNDOPED SEMIINSULATING GAAS

被引：8

作者：

IMMENROTH, H

LAMBERT, U

TOMZIG, E

机构：

[1] WACKER CHEMITRON,D-84479 BURGHAUSEN,GERMANY

[2] PPM PURE MET GMBH,D-38685 LANGELSHEIM,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 142卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90267-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The quality of arsenic and of GaAs polymaterial influences the substrate properties and their reproducibility. Interactions and correlations are investigated. The purification process of arsenic and the process parameters of the two-step synthesis were optimized. The impurity concentration and the stoichiometry variations in GaAs boules have been significantly decreased. As a result, the substrate mobilities have increased and the reproducible adjustment of resistivities in a range of 5 x 10(6) to 8 x 10(7) OMEGA cm within a narrow gap has been achieved.

引用

页码：37 / 48

页数：12