PULSED EXCIMER-LASER DEPOSITION OF SI1-XGEX THIN-FILMS

被引：16

作者：

ANTONI, F

FOGARASSY, E

FUCHS, C

GROB, JJ

PREVOT, B

STOQUERT, JP

机构：

[1] Laboratoire Phase, UPR du CNRS No. 292, 67037, Strasbourg Cedex 2

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

D O I：

10.1063/1.115082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ability to grow Si1-xGex thin films on single-crystal silicon or fused silica substates by the pulsed excimer laser ablation from a sintered SiGe target is investigated. The stoichiometry of the deposits was found to depend essentially on the Ge enrichment of the ablated target surface. Crystalline layers were obtained for substrate temperatures higher than a threshold value depending on its nature. Finally, surfaces, nearly free from droplets, were achieved by optimizing the laser irradiation conditions. (C) 1995 American Institute of Physics.

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页码：2072 / 2074

页数：3

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