ROOM TEMPERATURE HIGH-FIELD HALL MOBILITY IN N-TYPE SILICON

被引：3

作者：

BASU, PK

NAG, BR

机构：

[1] Institute of Radio Physics and Electronics, University of Calcutta, Calcutta

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 12期

关键词：

D O I：

10.1088/0022-3719/2/12/325

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The high-field Hall mobility of n-type silicon has been studied by assuming Maxwellian distribution function of the carriers in the valleys. Different values of inter-valley coupling constants have been used. It has been found that a good fit to the experimental results for the <111> direction may be obtained by a proper choice of the inter-valley coupling constants. But even then there remain some discrepancies in the detailed characteristics.

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页码：2396 / &

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共 18 条

[1] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J].

ASCHE, M ;

BOITSCHE.BL ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1965, 9 (02) :323-&

[2] ZUR FRAGE DER BEWEGLICHKEIT DER HEISSEN ELEKTRONEN IN N-SILIZIUM BEI 77-DEGREES-K [J].

ASCHE, M ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1964, 7 (01) :339-350

[3] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J].

AUBREY, JE ;

GUBLER, W ;

HENNINGSEN, T ;

KOENIG, SH .

PHYSICAL REVIEW, 1963, 130 (05) :1667-+

[4] DRIFT VELOCITY OF HOT ELECTRONS IN N-TYPE GERMANIUM [J].

BARRIE, R ;

BURGESS, RR .

CANADIAN JOURNAL OF PHYSICS, 1962, 40 (09) :1056-&

[5] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].

BUTCHER, PN ;

FAWCETT, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&

[6] LATTICE MOBILITY OF HOT CARRIERS [J].

CONWELL, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :234-239

[7] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[8] HOT-CARRIER DRIFT VELOCITY IN SILICON [J].

COSTATO, M ;

SCAVO, S .

NUOVO CIMENTO B, 1967, 52 (01) :236-&

[9] HOT-ELECTRON DRIFT MOBILITY IN SILICON BETWEEN 77 DEGREES K AND 300 DEGREES K [J].

COSTATO, M ;

SCAVO, S .

NUOVO CIMENTO B, 1968, 54 (01) :169-&

[10] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J].

DUH, CY ;

MOLL, JL .

SOLID-STATE ELECTRONICS, 1968, 11 (10) :917-+