ACCURATE DETERMINATION OF LATTICE MISMATCH IN THE EPITAXIAL ALAS/GAAS SYSTEM BY HIGH-RESOLUTION X-RAY-DIFFRACTION

被引：29

作者：

BOCCHI, C ^{[1
]}

FERRARI, C ^{[1
]}

FRANZOSI, P ^{[1
]}

BOSACCHI, A ^{[1
]}

FRANCHI, S ^{[1
]}

机构：

[1] CNR,MASPEC INST,VIA CHIAVARI 18 A,I-43100 PARMA,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(93)90068-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1-xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775 X 10(-3) has been obtained with an estimated accuracy of +/-5 x 10(-6). The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of nu = 0.322+/-0.005, in agreement with previously published data has been found.

引用

页码：427 / 434

页数：8

共 24 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].