GROWTH OF C-60 FILMS ON SILICON SURFACES

被引：68

作者：

CHEN, D ^{[1
]}

SARID, D ^{[1
]}

机构：

[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

来源：

SURFACE SCIENCE | 1994年 / 318卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)90342-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of crystalline C-60 films on Si(111) and Si(100) surfaces has been studied using scanning tunneling microscopy and atomic force microscopy. It is found that the films on these two silicon substrates, which consist of both partially ordered monolayer and crystalline islands, differ in their morphologies. The results are explained in terms of the relative strength of interaction of the first monolayer of C-60 molecules with the silicon substrate and the C-60 islands above it. Annealing the samples to elevated temperatures causes the C-60 islands to evaporate, leaving a full layer of C-60 molecules capped on the substrate.

引用

页码：74 / 82

页数：9

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