DESIGN STUDY OF CMOS VLSI FOR KEK B-FACTORY SILICON MICRO-VERTEX DETECTOR

被引:13
作者
IKEDA, H [1 ]
FUJITA, Y [1 ]
IKEDA, M [1 ]
INABA, S [1 ]
TANAKA, M [1 ]
TSUBOYAMA, T [1 ]
OKUNO, S [1 ]
机构
[1] GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
关键词
D O I
10.1016/0168-9002(93)90769-E
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Design studies on a front-end CMOS amplifier for a silicon strip detector of the KEK B-factory experiment were described in terms of circuit characterization, prototype fabrication and its evaluation. Based on the evaluation of the prototype work, we discussed on expected performance and architectural concepts of the read-out system for the B-factory silicon strip detector system.
引用
收藏
页码:269 / 276
页数:8
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SAITOH Y, 1992, KEK92171 PREPR
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