DESIGN STUDY OF CMOS VLSI FOR KEK B-FACTORY SILICON MICRO-VERTEX DETECTOR
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作者:
IKEDA, H
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
IKEDA, H
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FUJITA, Y
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
FUJITA, Y
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IKEDA, M
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
IKEDA, M
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INABA, S
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
INABA, S
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TANAKA, M
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
TANAKA, M
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TSUBOYAMA, T
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
TSUBOYAMA, T
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OKUNO, S
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GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPANGRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
OKUNO, S
[1
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机构:
[1] GRAD UNIV ADV STUDY,NATL LAB HIGH ENERGY PHYS,DEPT ACCELERATOR SCI,TSUKUBA 305,JAPAN
Design studies on a front-end CMOS amplifier for a silicon strip detector of the KEK B-factory experiment were described in terms of circuit characterization, prototype fabrication and its evaluation. Based on the evaluation of the prototype work, we discussed on expected performance and architectural concepts of the read-out system for the B-factory silicon strip detector system.