EXPERIMENTAL AND CALCULATED ATOMIC DISPLACEMENT THRESHOLD ENERGIES FOR BINARY SEMICONDUCTORS

被引:40
作者
BRYANT, FJ
COX, AFJ
机构
来源
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 310卷 / 1502期
关键词
D O I
10.1098/rspa.1969.0078
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
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页码:319 / &
相关论文
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