LANGMUIR-TYPE EVAPORATION OF CDTE EPILAYERS

被引：16

作者：

JUZA, P

FASCHINGER, W

HINGERL, K

SITTER, H

机构：

[1] Institut für Experimentalphysik, Universität Linz

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1088/0268-1242/5/3/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Langmuir-type evaporation of (100) oriented epilayers has been investigated. An activation energy of 1.98+or-0.18 eV for both Cd and Te 2 desorption has been determined. A quantitative analysis of the excess Cd desorption in the beginning of the CdTe evaporation from initially stoichiometric CdTe has been carried out yielding an upper limit for the Cd deficit in the epilayer of 2-5%.

引用

页码：191 / 195

页数：5

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