8.2 GHZ BANDWIDTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING MSM PHOTODIODE AND 0.5-MU-M RECESSED-GATE ALGAAS/GAAS HEMTS

被引：20

作者：

HURM, V

ROSENZWEIG, J

LUDWIG, M

BENZ, W

BERROTH, M

HUELSMANN, A

KAUFEL, G

KOEHLER, K

RAYNOR, B

SCHNEIDER, J

机构：

[1] Fraunhofer-Institut fuer Angewandte Festkoerperphysik

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 09期

关键词：

OPTOELECTRONICS; RECEIVERS; OPTICAL COMMUNICATION;

D O I：

10.1049/el:19910456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50-OMEGA output buffer has been fabricated using an enhancement/depletion 0.5-mu-m recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.

引用

页码：734 / 735

页数：2

共 6 条

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