RAMAN-SCATTERING IN METALLIC SI AND GE UP TO 50 GPA

被引：81

作者：

OLIJNYK, H

机构：

[1] Bayerisches Geoinstitut, Universität Bayreuth, W-8580 Bayreuth

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.68.2232

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical phonons in metallic high-pressure phases of Si and Ge were studied up to 50 GPa by Raman scattering. Two Raman bands (LO,TO) were observed in the beta-tin phase, one of which (LO) becomes soft on approaching the transition to primitive hexagonal. For hcp-Si there is one Raman-active mode (TO), and an additional mode is observed in the stability field of Si-VI. The available theoretical results agree within (10-20)% with the experimental results.

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页码：2232 / 2234

页数：3

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