SINGLE-LOBE Y-COUPLED LASER DIODE-ARRAYS

被引：12

作者：

WELCH, DF

CROSS, PS

SCIFRES, DR

STREIFER, W

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 06期

关键词：

SEMICONDUCTOR DIODES;

D O I：

10.1049/el:19870197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

'Y' coupled laser arrays have been fabricated with flared waveguides at the output facet to expand the near-field spot and increase the near-field fill factor to greater than 80%. The far-field radiation pattern is predominantly single-lobe, and power outputs of 150 mw cw have been obtained with threshold currents as low as 130 ma.

引用

页码：270 / 272

页数：3

共 9 条

[1] HIGH-POWER PHASE-LOCKED ARRAYS OF INDEX-GUIDED DIODE-LASERS
BOTEZ, D
CONNOLLY, JC
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1096 - 1098
[2] SINGLE-LOBE SYMMETRIC COUPLED LASER ARRAYS
CHEN, KL
WANG, S
[J]. ELECTRONICS LETTERS, 1985, 21 (08) : 347 - 348
[3] ANALYSIS OF SYMMETRICAL Y-JUNCTION LASER ARRAYS WITH UNIFORM NEAR-FIELD DISTRIBUTION
CHEN, KL
WANG, S
[J]. ELECTRONICS LETTERS, 1986, 22 (12) : 644 - 645
[4] CONTINUOUS WAVE HIGH-POWER, HIGH-TEMPERATURE SEMICONDUCTOR-LASER PHASE-LOCKED ARRAYS
SCIFRES, DR
BURNHAM, RD
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1030 - 1032
[5] STREIFER W, 1986, APPL PHYS LETT, V49, P58, DOI 10.1063/1.97351
[6] PROPERTIES OF ALGAAS BURIED HETEROSTRUCTURE LASERS AND LASER ARRAYS GROWN BY A 2-STEP METALORGANIC CHEMICAL VAPOR-DEPOSITION
WELCH, DF
CROSS, PS
SCIFRES, DR
STREIFER, W
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1716 - 1718
[7] HIGH-POWER, ALGAAS BURIED HETEROSTRUCTURE LASERS WITH FLARED WAVE-GUIDES
WELCH, DF
CROSS, PS
SCIFRES, DR
STREIFER, W
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 233 - 235
[8] HIGH-POWER (CW) IN-PHASE LOCKED Y-COUPLED LASER ARRAYS
WELCH, DF
CROSS, PS
SCIFRES, DR
STREIFER, W
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1632 - 1634
[9] IN-PHASE EMISSION FROM INDEX-GUIDED LASER ARRAY UP TO 400 MW
WELCH, DF
CROSS, P
SCIFRES, D
STREIFER, W
BURNHAM, RD
[J]. ELECTRONICS LETTERS, 1986, 22 (06) : 293 - 294

← 1 →