SCANNING TUNNELING MICROSCOPY OF CLEAN SILICON SURFACES AT ELEVATED-TEMPERATURES

被引:54
作者
TOKUMOTO, H [1 ]
IWATSUKI, M [1 ]
机构
[1] JEOL LTD, TOKYO 196, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 3B期
关键词
SCANNING TUNNELING MICROSCOPY (STM); ELEVATED TEMPERATURES; SI(001)-2 X 1 SURFACE; SI(111)-7 X 7 SURFACE; DIMER ROWS; (7 X 7)-(1 X 1) PHASE TRANSITION; STEP SHIFTING; SURFACE MODIFICATIONS;
D O I
10.1143/JJAP.32.1368
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we shall review scanning tunneling microscopy on clean Si(Ill) and Si(001) surfaces at elevated temperatures of as high as 950-degrees-C. Various problems occurring at elevated temperatures, such as the thermal drift, the low Curie temperature of the tip-scanning elements and outgassing, are overcome by paying special caution to the design of the STM unit, the sample dimensions, and the operational methods. Several interesting phenomena appearing at elevated temperatures are presented: the appearance of the dimer rows and step edges on the Si(001) surface at temperatures up to 920-degrees-C, the dynamic behavior of the (7 x 7)-(1 x 1) phase transition on the Si(111) surface at temperatures around 860-degrees-C, the step shifting appearing on the Si(111) surface under dc electric fields (electromigration effect) around the phase transition temperature (869-degrees-C), and the surface modification of pyramids and craters created on both Si(111) and Si(001) surfaces at elevated temperatures.
引用
收藏
页码:1368 / 1378
页数:11
相关论文
共 109 条
[1]   SURFACE MODIFICATION WITH THE SCANNING TUNNELING MICROSCOPE [J].
ABRAHAM, DW ;
MAMIN, HJ ;
GANZ, E ;
CLARKE, J .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1986, 30 (05) :492-499
[2]   STRUCTURAL MODEL FOR THE NEGATIVE ELECTRON-AFFINITY SURFACE OF O/CS/SI(001)2X1 [J].
ABUKAWA, T ;
KONO, S ;
SAKAMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02) :L303-L305
[3]   NANOMETER-SCALE HOLE FORMATION ON GRAPHITE USING A SCANNING TUNNELING MICROSCOPE [J].
ALBRECHT, TR ;
DOVEK, MM ;
KIRK, MD ;
LANG, CA ;
QUATE, CF ;
SMITH, DPE .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1727-1729
[4]   PROPOSAL FOR SYMMETRIC DIMERS AT THE SI(100)-2X1 SURFACE [J].
ARTACHO, E ;
YNDURAIN, F .
PHYSICAL REVIEW LETTERS, 1989, 62 (21) :2491-2494
[5]   BIATOMIC STEPS ON (001) SILICON SURFACES [J].
ASPNES, DE ;
IHM, J .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3054-3057
[6]  
BANDO H, 1987, J ELECTRON MICROSC, V36, P270
[7]   ATOMIC-STRUCTURE OF THE SI(001)-(2X1) SURFACE [J].
BATRA, IP .
PHYSICAL REVIEW B, 1990, 41 (08) :5048-5054
[8]   ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
SWARTZENTRUBER, BS .
NATURE, 1987, 325 (6103) :419-421
[9]  
BEHM RJ, 1990, SCANNING TUNNELING M, P1
[10]   THE SI(111) 7X7 TO 1X1 TRANSITION [J].
BENNETT, PA ;
WEBB, MW .
SURFACE SCIENCE, 1981, 104 (01) :74-104