BAND-STRUCTURE OF FEMTOSECOND-LASER-PULSE EXCITED GAAS

被引：32

作者：

KIM, DH ^{[1
]}

EHRENREICH, K ^{[1
]}

RUNGE, E ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 02期

关键词：

D O I：

10.1016/0038-1098(94)90389-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A major contribution to the change in the band structure of highly excited GaAs is shown to be electronic in origin and due to the change in the screened pseudopotential and exchange-correlation effects. For 10% electron excitation, the fundamental gap, which becomes indirect as in GaP, vanishes, and the bonding-antibonding gap at X is reduced by almost one half.

引用

页码：119 / 122

页数：4

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