LONG MINORITY-CARRIER LIFETIMES IN 6H SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION

The room-temperature minority carrier lifetimes have been measured on 6H SiC epitaxial layers with residual n-type doping ranging from below 1014 cm-3 to above 1017 cm-3. Lifetimes as high as 0.45 μs have been achieved for thick low-doped material. The samples were grown by chemical vapor deposition using silane and propane or silane and methane in a hydrogen ambient. The minority carrier lifetimes were measured by monitoring the decay of the near-band gap room-temperature luminescence of the samples after excitation of a short laser pulse. © 1995 American Institute of Physics.