PRINCIPLES OF A PHENOMENOLOGICAL THEORY OF GUNN-EFFECT DOMAIN DYNAMICS

被引：33

作者：

HEINLE, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 06期

关键词：

D O I：

10.1016/0038-1101(68)90011-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：583 / +

页数：1

共 34 条

[1] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES [J].

ACKET, GA .

PHYSICS LETTERS A, 1967, A 24 (04) :200-&

[2] VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE FROM MEASUREMENT OF CONDUCTIVITY IN A MICROWAVE FIELD [J].

BRASLAU, N .

PHYSICS LETTERS A, 1967, A 24 (10) :531-&

[3] THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN .

PHYSICS LETTERS, 1965, 19 (07) :546-&

[4] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

HILSUM, C .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&

[5] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[6]

CARROLL JE, 1966, ELECTRON LETT, V2, P194

[7] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J].

CHANG, DM ;

MOLL, JL .

APPLIED PHYSICS LETTERS, 1966, 9 (08) :283-+

[8] EFFECT OF NONPARABOLICITY ON DRIFT VELOCITY IN GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICS LETTERS A, 1967, A 25 (04) :302-&

[9] VARIATION OF DRIFT VELOCITY WITH FIELD IN GAAS [J].

CONWELL, EM ;

VASSELL, MO .

APPLIED PHYSICS LETTERS, 1966, 9 (11) :411-+

[10] FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J].

CONWELL, EM .

PHYSICS LETTERS, 1966, 21 (04) :368-+

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